In still a further aspect, the XsunX Process provides a solar cell comprising a substrate with a melting temperature of less than 450°C, a first conductive layer overlying the substrate, a first polycrystalline film overlying the first conductive layer, a second polycrystalline film overlying the first polycrystalline film, and a second conductive layer overlying the second polycrystalline film.
The XsunX Process will achieve numerous advantages over conventional techniques for forming solar cells. For example, the present method uses conventional equipment and processes from semiconductor operations to manufacture the solar cells. In one aspect of the XsunX Process, an Excimer laser is used to anneal the amorphous silicon layers. Use of this, or a similar laser, allows the forming of polycrystalline silicon without exposing the substrate to high temperature that will distort or destroy it. Therefore, low melting point materials such as plastic may be used. The present solar cells can be transparent, which makes them desirable for placing over glass and other see through structures. In other aspects, the invention is expected to be easy to implement and control. The present cell structure is extremely thin and efficient and can be implemented on a variety of applications.